10/15/2013 – San Jose, California: RFMW Ltd., today announced the opening of direct sales offices in Russia. With locations in Moscow and St. Petersburg, the new sales organization will support customers in the Russian Federation, Ukraine, Belarus, Armenia, Georgia and Kazakhstan. RFMW is a specialized distributor that uniquely provides customers and suppliers with focused distribution of RF/microwave components as well as customer specific component engineering support. These direct sales offices allow RFMW to quickly and effectively introduce products from RFMW’s suppliers into RF/microwave design centers and OEMs currently located within these areas, and support the supply chain to contract manufacturing…
Author: RFMW
RFMW, Ltd. announces immediate delivery of selected, one meter cable assemblies from Florida RF Labs, Inc. The Lab-Flex® family of cable assemblies boasts six different cable types supporting applications to 65GHz. They are extremely well-suited for high frequency test applications and high-density interconnects where insertion loss and stability over temperature are concerns. Florida RF Lab-Flex® assemblies offer >90dB of shielding effectiveness and a wide range of connectors including, but not limited to, 7/16, TNC, SMA, 2.4mm, 2.92mm and 1.86mm interfaces in various configurations. The Lab-Flex® product family are all manufactured using a custom solder sleeve and are available with extended…
RFMW, Ltd. announces design and sales support for the TQL9047, an 8-pin, 2x2mm DFN packaged gain block from TriQuint Semiconductor. The TQL9047 offers internally match I/O over the frequency range of 50 to 4000MHz. With OIP3 of 35.5dBm, this gain block is ideally suited for BTS transceivers and repeaters or for IF chains in high frequency PTP radios. Military, L-band radios would also benefit from the high linearity. The TriQuint TQL9047 offers shutdown capability, a unique feature for low-cost gain blocks and requires only a 3 to 5V positive supply while drawing 70mA.
RFMW , Ltd. announces design and sales support for a new 7-bit, 31.75dB digital step attenuator from Peregrine Semiconductor. The PE43704 offers an extremely wide operational frequency range of 9kHz to 8GHz. DC blocking capacitors are not required if DC voltage is not present on the RF ports. Even with this large bandwidth, the PE43704 maintains excellent monotonicity over the entire frequency range. Peregrine’s PE43704 handles up to 31dBm of instantaneous power with a CW power rating of 28 dBm. 0.25dB steps, 1.8V/3.3V control logic and an IIP3 of 61dBm make this an ideal step attenuator for multiple applications. The…
RFMW, Ltd. announces immediate availability for Carlisle Interconnect Technologies WMP series of sub-miniature, blind-mate interconnect solutions. The WMP series is ideal for complex, high performance microwave modules and systems where the use of a light weight connector is a primary issue. The WMP series feature set makes them a perfect solution in military radios, radars, space, and test applications. The blind-mate, push-on interface design facilitates rapid assembly and testing while enabling dense connector configurations in microwave modules. Available bullet sizes allow PCB stack height of <0.120”. The ability to tolerate radial and axial misalignment allows for multiple engagement/disengagement cycles without…
RFMW, Ltd. announces design and sales support for Skyworks SE2432L, a high performance, fully integrated RF Front End Module designed for ZigBee/Smart Energy applications. The Skyworks SE2432L FEM offers fully matched input baluns, interstage matching, a harmonic filter, and digital controls compatible with 1.6 – 3.6 V CMOS levels. Capable of operating over a wide supply voltage range from 2.0 to 3.6V, the SE2432L can be used in battery powered applications such as in-home appliances and “smart” thermostats. ON/OFF time is < 800 nsec and the SE2432L is housed in a 3x4x0.9mm Skyworks Green package.
RFMD has announced the introduction of the world’s first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. RFMD is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market. According to industry analysts the GaN microelectronics market is expected to more than triple to $334 million by 2017, representing a compound annual growth rate (CAGR) of 28%. This market growth comes from both military (radar, electronic warfare, communications) and commercial (power management, cellular, CATV, land mobile…
RFMW, Ltd. announces design and sales support for a 60W power amplifier from TriQuint Semiconductor intended for X-band commercial and military radar applications in the 9 to 10GHz range. The TGA2313-FL provides 13dB of gain from a 24V supply drawing 2.4A. A 10-lead, bold-down flange package with CuW-base provides superior thermal management. In addition, TriQuint’s GaN on SiC substrate provides reliable high power operation. TGA2313-FL I/O ports are matched to 50 ohms.PAE is 38%.
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s 2.5W amplifier module for small cell applications. The TGA2450-SM provides 3 gain stages offering overall gain of 35dB. The final stage integrates a Doherty design allowing peak power up to 18W. Operating from 2110 to 2170MHz, TriQuint’s TGA2450-SM has >20MHz signal bandwidth in a 50 ohm, input/output matched 20x20mm SMT package. Independent gain stages are powered with +18 and +5V supplies. 35% efficiency highlights this HBT device.
RFMW, Ltd. announces design and sales support for the T1G6001032-SM, a ceramic packaged, 10W peak (P3dB) power transistor fabricated using TriQuint Semiconductor’s proven Gallium Nitride (GaN) production process. Offering a broad instantaneous bandwidth afforded from TriQuint’s TQGaN25 process technology, the T1G6001032-SM is rated from DC to 6GHz. Mid-band linear gain is >17dB with over 50% efficiency. Operating at 32V with only 50mA of quiescent drain current, the T1G6001032-SM finds applications in commercial and military radar, communication transceivers, avionics and wideband amplifier designs. TriQuint packages this unmatched transistor in a ceramic, 5x5mm QFN for minimal thermal resistance and ease of use.